IT&Software

Samsung starts cranking out 512GB eUFS storage

Samsung starts cranking out 512GB eUFS storage

Unlike iPhone and iPads, Samsung's phones and tablets do not offer as much built-in storage. There will always be use for large internal storage space - as media files increase in size because of the proliferation of 4K content, and as data connection speeds get better so that you can now download files with larger sizes. But come next year, we should see that number double as Samsung has announced that it has begun manufacturing 512GB embedded storage for phones. The company yet has to confirm whether it will use the new storage solution for the Galaxy S9, but it is possible that the upcoming flagship smartphone from Samsung could have a 512 GB option. Although most flagships stop at 128 GB these days, the tech giant continues its push in this market by starting to manufacture the first 512 GB eUFS embedded storage solution.

MicroSD storage seems to be the main target with this innovation, as Samsung suggest embedded storage is more stable and and less limiting than current external storage cards used in mobile devices.

The new 512GB UFS increases the density of the 256GB eUFS storage from 48 layers to 64 layers and also includes a controller chip.

The new 512GB UFS device consists of eight 64-layer 512-gigabit V-NAND chips stacked together with a controller chip. Compared to a 64GB chip that could only hold 13 of these videos, that's a massive increase.

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The new eUFS storage is also said to read 42,000 IOPS (input/output per second) and write 40,000 IOPS for random operation.

Samsung rates the new 512GB eUFS for sequential read speeds up to 860MB/s and sequential write speeds up to 255MB/s. That means you only need about six seconds to transfer an HD video clip to an SSD, Samsung says. According to Samsung, the random writes of the UFS package are approximately 400 times faster than the 100 IOPS speed of a conventional microSD card. However, if the company starts using this storage module, we may be facing the prospects of losing the microSD card slot.

For ultra-premium flagship devices, Samsung is expected to rapidly increase production for its 64-layer 512Gb V-NAND chips, and expand its 256Gb V-NAND production.